BAS56 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 3 of 12
NXP Semiconductors
BAS56
High-speed double diode
5. Limiting values
[1] Series connection.
[2] Device mounted on an FR4 PCB.
[3] Single diode loaded.
[4] Double diode loaded.
[5] Tj
=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-60V
[1]
-120V
VR
reverse voltage - 60 V
[1]
-120V
IF
forward current
[2][3]
-200mA
[2][4]
-150mA
IFRM
repetitive peak forward
current
[3]
-600mA
[4]
-430mA
IFSM
non-repetitive peak forward
square wave
current
[5]
tp
=1μs-9A
tp
= 100
μs-3A
tp
=10ms - 1.7 A
Ptot
total power dissipation Tamb
=25°C
[2]
-250mW
Tj
junction temperature - 150
°C
Tstg
storage temperature
?65 +150
°C
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Rth(j-t)
thermal resistance from
junction to tie-point
- - 360 K/W
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